Modeling switching losses in MOSFETs half-bridges

Abstract

This paper discusses the modeling of switching losses in MOSFETs half-bridges. The model proposed in the paper provides a trade-off between accuracy and computing simplicity for quick feasibility investigations and comparative evaluations among different MOSFETs combinations to be selected for the design of high-efficiency switching power supplies. The proposed model also enables a detailed analysis of capacitive currents circulating through the MOSFETs during commutations, thus allowing a more accurate loss understanding and calculation.