{"title":"A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance","authors":"Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu, Ran Liu, Lirong Zheng","doi":"10.1109/ASICON47005.2019.8983662","DOIUrl":null,"url":null,"abstract":"A GaSb/ln<inf>0.4</inf>Ga<inf>0.6</inf>As heterojunction Z-Shaped TFET is proposed and investigated by a TCAD simulation tool. A low subthreshold swing (16.2 mV/dec) is obtained. A large on- state current, I<inf>on</inf>(748μA/μm) and a large on-and off-state current ratio, <tex>$I$</tex><inf>on</inf>/I<inf>off</inf> (7.48 x10<sup>9</sup>) are achieved for the device under a drain bias of 0.5 V. In addition, the temperature dependence of the proposed device is presented, and it shows that low temperatures favor for <tex>$I$</tex><inf>on</inf>/I<inf>off</inf>. It is also revealed that the on-state current can be enhanced by adjusting the device geometry. Moreover, the device can work at a low supply voltage (~0.2 V).","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON47005.2019.8983662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A GaSb/ln0.4Ga0.6As heterojunction Z-Shaped TFET is proposed and investigated by a TCAD simulation tool. A low subthreshold swing (16.2 mV/dec) is obtained. A large on- state current, Ion(748μA/μm) and a large on-and off-state current ratio, $I$on/Ioff (7.48 x109) are achieved for the device under a drain bias of 0.5 V. In addition, the temperature dependence of the proposed device is presented, and it shows that low temperatures favor for $I$on/Ioff. It is also revealed that the on-state current can be enhanced by adjusting the device geometry. Moreover, the device can work at a low supply voltage (~0.2 V).
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