Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications

Abstract

This paper investigates the Ti thickness modulation based simple strategy to regulate the oxygen vacancy concentration in the HfOx film and implemented to realize the resistive switching properties. Accordingly, we demonstrated a way to control the forming voltage, decrease the operation current to sub-μA level, controllable BRS/CRS and to bypass the self-CRS phenomena in Ti/HfOx based 1T1R RRAM devices for future memory applications.