Performance evolution of an 2×2 MZI electro-optic switch using Ti:KNbO3 as waveguide at 1.55 μm

2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) Pub Date : 2016-09-01 DOI:10.1109/CEEICT.2016.7873125

Rabeya Khatun, A. Chowdhury

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引用次数: 2

Abstract

All optical switches have become crucial components in Wavelength division multiplexing (WDM) technology to build large optical cross connect (OXC) for wide-area communication network and are well known mainly because of their high speed of operation. This paper shows the optimum performance of a 2×2 MZI electro-optic switch using a channel profile based on titanium diffused potassium niobate (Ti:KNbO3) at 1.55 μm. Extinction ratio and insertion loss are two major performance factors to obtain the design parameters, which are evaluated by varying titanium strip thickness, waveguide width, length of interferometer arm, gap in 3 dB coupler region and gap between interferometer arm. Finally the position of center electrode regarding main axis of the device is also varied. Optimization leads to the value of 0.00925 dB insertion loss and 32.157 dB extinction ratio for both cross state (0 V) & bar state (4 V). The originality of this work is to investigate all the device parameters of a 2×2 Ti:KNbO3 based switch at 1.55 μm.

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采用Ti:KNbO3作为1.55 μm波导的2×2 MZI电光开关的性能演变

各种光交换机已成为波分复用(WDM)技术中用于构建广域通信网络的大型光交叉连接(OXC)的关键部件，其高速的运行速度为人们所熟知。本文展示了在1.55 μm处采用钛扩散铌酸钾(Ti:KNbO3)通道结构的2×2 MZI电光开关的最佳性能。消光比和插入损耗是获得设计参数的两个主要性能因素，通过改变钛条厚度、波导宽度、干涉仪臂长度、3db耦合器区域间隙和干涉仪臂间隙来评估设计参数。最后，中心电极相对于装置主轴的位置也发生了变化。优化后的插入损耗为0.00925 dB，消光比为32.157 dB，无论交叉状态(0 V)还是bar状态(4 V)。这项工作的独创性在于研究了2×2 Ti:KNbO3基开关在1.55 μm处的所有器件参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT)

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