Area selective gold MOCVD for VLSI electronics

Abstract

Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-AA-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500 degrees C) to an ambient of (C/sub 2/H/sub 5/)/sub 3/PAuCl vapor for 1 h.<>