Fabrication and Yield of Large Area Quantum Well Modulators

K. Goossen, D. Prather
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Abstract

InP-based multiple quantum well modulators were fabricated and the yield of the modulators was explored. Bad pixels were removed from operation which reduced the modulation area but limits the power consumption. Leakage around the 15 volts reverse bias were also investigated.
大面积量子阱调制器的制备与成品率
制备了基于inp的多量子阱调制器,并对其产率进行了研究。从操作中去除坏像素,减少了调制面积,但限制了功耗。还研究了15伏反向偏置附近的漏电。
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