Single Trap Profiling by Charge Pumping

Abstract

We demonstrate that the CP characteristic of a single trap can be measured in relatively large MOSFETs or even in arrays of MOSFETs with common gates, common sources and separated drain contacts where the total quantity of interface traps can be as high as several thousands. The influence of CP parameters is also demonstrated. The possibility to use these results to study the influence of single trap on the GIDL is discussed.