{"title":"CMOS state of the arts and future potential","authors":"Y. Nishi","doi":"10.1109/NMDC.2006.4388864","DOIUrl":null,"url":null,"abstract":"The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.","PeriodicalId":200163,"journal":{"name":"2006 IEEE Nanotechnology Materials and Devices Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Nanotechnology Materials and Devices Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2006.4388864","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.