K. Katayama, S. Amakawa, K. Takano, T. Yoshida, M. Fujishima, K. Hisamitsu, H. Takatsuka
{"title":"An 80–106 GHz CMOS amplifier with 0.5V supply voltage","authors":"K. Katayama, S. Amakawa, K. Takano, T. Yoshida, M. Fujishima, K. Hisamitsu, H. Takatsuka","doi":"10.1109/RFIC.2017.7969079","DOIUrl":null,"url":null,"abstract":"A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-ƒmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-ƒmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.