An 80–106 GHz CMOS amplifier with 0.5V supply voltage

K. Katayama, S. Amakawa, K. Takano, T. Yoshida, M. Fujishima, K. Hisamitsu, H. Takatsuka
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引用次数: 8

Abstract

A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-ƒmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.
一个80-106 GHz的CMOS放大器,0.5V供电电压
提出了一种基于0.5 v电源的低功耗w波段CMOS放大器。它的峰值增益为24.1 dB,功耗为12mW。这是通过(a)使用Mie Fujitsu Semiconductor 55nm CMOS技术和深度耗尽通道(DDC) mosfet(专门用于低于1v供电电压的超低功耗设计),(b)高-ƒmax晶体管布局,在w波段比普通布局提供约1db的增益,以及(c)单端负电容反馈技术实现的。它提供了与差分对应(具有交叉耦合反馈电容器)相当的宽带增益提升,而功耗是后者的一半。
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