A new monolithic power actuator devoted to high voltage and high frequency applications [emitter-switched bipolar transistor]

Abstract

A new monolithic emitter-switching bipolar transistor (ESBT) having a good switching behavior, along with a highly performing on-state conduction characteristic, is reported. The device is the cascode connection of a high voltage bipolar transistor and a fast-switching low-voltage power MOSFET, realized inside the BJT part. The structure, which is based on a monolithic technology, has been experimentally analyzed to derive several results, particularly dwelling upon the on-state conduction characteristic and the storage time behavior of the presented device.