NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing

Yu-Hsuan Lin, P. Tseng, F. Lee, Ming-Hsiu Lee, C. Hsieh, Dai-Ying Lee, Keh-Chung Wang, Chih-Yuan Lu
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Abstract

In the approximate in-memory-searching (IMS) system, the numeral-system-induced matching score counting error will cause computation error and degrade the system performance significantly especially at high resolution scenarios. This paper discusses the problem in detail and proposes a novel NOR-Flash-based multilevel IMS cell and the related operation scheme for approximate computing. The device characteristics and reliability performances are carefully evaluated on a high density NOR Flash array. Experiments and simulations suggest that the proposed approximate IMS cell not only can provide the matching score based on the difference between the input and the stored data, but also improve the system robustness toward data variation.
基于NOR闪存的近似计算多级内存搜索体系结构
在近似内存搜索(IMS)系统中,数字系统引起的匹配分数计数错误会导致计算误差,严重降低系统性能,特别是在高分辨率场景下。本文详细讨论了这一问题,提出了一种新的基于nor - flash的多级IMS单元及其近似计算操作方案。在高密度NOR闪存阵列上仔细评估了器件特性和可靠性性能。实验和仿真结果表明,所提出的近似IMS单元不仅可以根据输入数据和存储数据的差异提供匹配分数,而且提高了系统对数据变化的鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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