Low temperature operation of graded-channel SOI nMOSFETs for analog applications

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI:10.1109/WOLTE.2002.1022444

M. Pavanello, P. G. Der Agopian, J. Martino, D. Flandre

引用次数: 4

Abstract

We present in this work is an analysis of die low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fully-depleted SOI nMOSFET.

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模拟应用的梯度通道SOI nmosfet低温工作

在这项工作中，我们分析了用于模拟应用的梯度通道全耗尽绝缘体上硅(SOI) nmosfet的芯片低温工作。MEDICI二维数值模拟与实测结果的比较支持了这一分析。与传统的全耗尽SOI nMOSFET相比，分级沟道晶体管在100k时具有更高的早期电压和跨导性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 5th European Workshop on Low Temperature Electronics

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