A sub-threshold halo implanted MOS implementation of Izhikevich neuron model

Abstract

This work describes a current mode implementation of Izhikevich neuron model implemented with halo implanted devices 130 nm structured within matrices of order m × n capable of substantially increasing output impedance of such devices while also improving mismatch. The proposed neuron was successfully simulated in 130 nm IBM CMOS process as the dynamical translinear circuit topology adopted generates the 20 patterns defined in Izhikevich model as other similar works while improving several aspects as the low supplied voltage used 250 mV.