Unseeded growth of poly-crystalline Ge with (111) surface orientation on insulator by pulsed green laser annealing

M. Horita, Toru Takao, Yoshiaki Nieda, Y. Ishikawa, N. Sasaki, Y. Uraoka
{"title":"Unseeded growth of poly-crystalline Ge with (111) surface orientation on insulator by pulsed green laser annealing","authors":"M. Horita, Toru Takao, Yoshiaki Nieda, Y. Ishikawa, N. Sasaki, Y. Uraoka","doi":"10.1149/07510.0087ECST","DOIUrl":null,"url":null,"abstract":"This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-μm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 μm wide and ~10 μm long, where the maximum length was 20 μm. The crystallization process was discussed from dependence of the laser fluence on the crystal properties of Ge stripes.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/07510.0087ECST","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-μm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 μm wide and ~10 μm long, where the maximum length was 20 μm. The crystallization process was discussed from dependence of the laser fluence on the crystal properties of Ge stripes.
脉冲绿色激光退火在绝缘体上生长具有(111)表面取向的多晶锗
采用扫描脉冲绿色激光退火技术,在非晶锗的绝缘体上生长出取向良好的大晶粒多晶锗。将锗制成2 μm宽的条纹,然后用激光辐照退火。退火后的Ge条纹晶面取向良好(111),晶粒尺寸为2 μm宽,~10 μm长,最大长度为20 μm。从激光能量对锗条纹晶体性质的影响出发,讨论了锗条纹的结晶过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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