The measurement and tuning of SiC Diode Voltage Doubler represented as diffusion-welded stack.

Abstract

In this paper, the results of measurements and settings for various output parameters of device are presented. The object of research was the prototype of a voltage multiplier represented as the diffusion-welded stack. Two options of voltage multiplier prototypes have been considered: first is the scheme with external capacitors and the second is the multiplier of the vertical composition using the diode's own capacitance. The capacitance-voltage as well as oscillograms of input and output signals for both multiplier prototypes are presented.