{"title":"New Transistor Operating for High Frequency and High Power","authors":"J. Nishizawa, Y. Kato","doi":"10.1109/EUMA.1976.332347","DOIUrl":null,"url":null,"abstract":"The main mechanism of operation of a new transistor which shows exponential I-V character, is based on the static induction and is called SIT (Static Induction Transistor). SIT is a promissing device also for higher frequency operation because of (1) short channel length, (2) lower gate series resistance, (3) small gate-source capacitance, (4) small gate-drain capacitance. Si SIT exhibits GHz operation: 200 MHz-40 watts, 1 GHz-5 watts, cut-off frequency is more than 2.0 GHz. Further developments of higher frequency and, higher power devices can be realized in distributed structure and travelling-wave operation of SIT. It will be soon possible to prepare an SIT which operates 100 watts out-put power at GHz frequencies.","PeriodicalId":377507,"journal":{"name":"1976 6th European Microwave Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1976 6th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1976.332347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The main mechanism of operation of a new transistor which shows exponential I-V character, is based on the static induction and is called SIT (Static Induction Transistor). SIT is a promissing device also for higher frequency operation because of (1) short channel length, (2) lower gate series resistance, (3) small gate-source capacitance, (4) small gate-drain capacitance. Si SIT exhibits GHz operation: 200 MHz-40 watts, 1 GHz-5 watts, cut-off frequency is more than 2.0 GHz. Further developments of higher frequency and, higher power devices can be realized in distributed structure and travelling-wave operation of SIT. It will be soon possible to prepare an SIT which operates 100 watts out-put power at GHz frequencies.