New Transistor Operating for High Frequency and High Power

J. Nishizawa, Y. Kato
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引用次数: 4

Abstract

The main mechanism of operation of a new transistor which shows exponential I-V character, is based on the static induction and is called SIT (Static Induction Transistor). SIT is a promissing device also for higher frequency operation because of (1) short channel length, (2) lower gate series resistance, (3) small gate-source capacitance, (4) small gate-drain capacitance. Si SIT exhibits GHz operation: 200 MHz-40 watts, 1 GHz-5 watts, cut-off frequency is more than 2.0 GHz. Further developments of higher frequency and, higher power devices can be realized in distributed structure and travelling-wave operation of SIT. It will be soon possible to prepare an SIT which operates 100 watts out-put power at GHz frequencies.
新型高频大功率晶体管
一种新型的I-V指数型晶体管的主要工作机制是基于静电感应,被称为SIT (static induction transistor)。由于(1)通道长度短,(2)栅极串联电阻低,(3)栅极-源电容小,(4)栅极-漏极电容小,SIT也是一种很有希望用于更高频率工作的器件。Si SIT具有GHz工作:200mhz -40瓦,1ghz -5瓦,截止频率大于2.0 GHz。SIT的分布式结构和行波运行可以实现更高频率和更高功率器件的进一步发展。很快就有可能研制出在千兆赫频率下运行100瓦输出功率的SIT。
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