Ahmed Saeed, M. Mousa, M. Salah, A. Zekry, M. Abouelatta, A. Shaker, F. Amer, Roaa I. Mubarak
{"title":"Design and Simulation of ETL-Free Perovskite/Si Tandem Cell with 33% Efficiency","authors":"Ahmed Saeed, M. Mousa, M. Salah, A. Zekry, M. Abouelatta, A. Shaker, F. Amer, Roaa I. Mubarak","doi":"10.37394/232017.2022.13.18","DOIUrl":null,"url":null,"abstract":"Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and\nsimulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the\ntransmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is\noptimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx\nlayer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with\nan open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2\n.","PeriodicalId":202814,"journal":{"name":"WSEAS TRANSACTIONS ON ELECTRONICS","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"WSEAS TRANSACTIONS ON ELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37394/232017.2022.13.18","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and
simulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the
transmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is
optimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx
layer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with
an open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2
.