Design and Simulation of ETL-Free Perovskite/Si Tandem Cell with 33% Efficiency

Abstract

Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and simulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the transmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is optimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx layer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with an open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2 .