Memristor macromodel and its application to neuronal spike generation

Sangho Shin, Kyungmin Kim, S. Kang
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引用次数: 2

Abstract

This paper introduces a memristor-based neuronal spike event generator, in which the memristor models the nonlinear behavior of opening and closing of sodium and potassium ion channels. The neuronal action potential describing both the integrate-and-fire spiking events and the refractory period of nerve membrane cells is enabled by utilizing dual time-constants offered by the bistable resistance state of practical memristive devices. A memristor macromodel which is capable of representing both the threshold effects and boundary assurance is also presented.
忆阻器宏观模型及其在神经元脉冲产生中的应用
本文介绍了一种基于忆阻器的神经元脉冲事件发生器,其中忆阻器模拟了钠离子通道和钾离子通道的非线性打开和关闭行为。利用实用记忆器件的双稳态电阻状态提供的双时间常数,可以实现描述神经膜细胞的整合-放电尖峰事件和不应期的神经元动作电位。提出了一种既能表示阈值效应又能保证边界的忆阻器宏模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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