Transient Switching Behavior in Silicon MOSFET RF Switches

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.51

R. Caverly, J.J. Manosca

引用次数: 2

Abstract

Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.

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硅MOSFET射频开关的瞬态开关行为

硅MOS器件在高度集成的射频集成电路中的应用越来越多。本文给出了外部栅极偏置电阻和分布式RC栅极效应对这些器件开关速度影响的研究结果。给出了一个模型，并用仿真和实测数据对模型进行了验证。该模型还表明，最佳栅极指数在10 ~ 20个范围内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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