On the electro-optical characteristics of CMOS compatible photodiodes

Abstract

A numerical model for the solution of semiconductor-device equations in the presence of an optical-generation effect is presented. This model, developed as a part of the general-purpose semiconductor-device analysis program HFIELDS, is to be applied to the analysis of optical sensors used in semiconductor integrated imagers. Preliminary theoretical results on CMOS-compatible photodiodes are presented and compared with experiments.<>