A 5 GHz CMOS low-noise amplifier with inductive ESD protection exceeding 3 kV HBM

Abstract

This work presents a 5 GHz LNA with on-chip ESD-protection provided by an integrated inductor. The circuit is implemented in a standard 0.18 /spl mu/m CMOS technology. The LNA is matched at both input and output. It achieves a power gain of 20 dB with a noise figure of 3.5 dB at a power consumption of only 15 mW including the output buffer. The protection level complies with the class II HBM standard of 2 kV.