A Low Noise MEMS Based CMOS Resonator Using Magnetoelectric Sensor

Abstract

This paper presents a miniaturized complementary-metal-oxide-semiconductor (CMOS) oscillator using microelectromechanical system (MEMS) resonating at 159 MHz frequency. The CMOS circuit is designed and simulated in 0.35,..,m XFAB technology. The fabricated magnetoelectric (ME) sensor offers quality factor of 653. The proposed oscillator provides a phase noise as low as -131.3 dBc/Hz at 10kHz and -137.9 dBc/Hz at 100 kHz offset frequencies while consuming 2.24 mW power.