Industrialised SPAD in 40 nm technology

Sara Pellegrini, Bruce Rae, A. Pingault, D. Golanski, S. Jouan, C. Lapeyre, B. Mamdy
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引用次数: 44

Abstract

We present the first mature SPAD device in advanced 40 nm technology. For the first time we also show dedicated microlens fabrication on top of SPADs integrated in the same technology node. A high fill factor >70% is reported together with a low DCR median of 50cps at room temperature and a high PDP of 5% at 840nm. By taking advantage of the small digital node, a larger amount of logic can be integrated inside the pixel, which is ready to be ported to a 3D stacked technology, where the logic is implemented in a fully digital dedicated layer [1].
工业化的SPAD采用40纳米技术
我们提出了第一个成熟的先进40纳米技术的SPAD器件。我们还首次展示了集成在同一技术节点中的spad之上的专用微透镜制造。据报道,高填充系数>70%,室温下低DCR中值为50cps, 840nm时高PDP为5%。利用小数字节点的优势,可以在像素内部集成更大量的逻辑,这些逻辑可以移植到3D堆叠技术中,在3D堆叠技术中,逻辑在全数字专用层中实现[1]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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