2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies

Abstract

The body diode of a SiC power MOSFET is not suitable for current conduction in the third quadrant due high on-state voltage drop, large reverse recovery losses [1] , and possibility of bipolar degradation [2] . Integrating a Junction Barrier Schottky (JBS) diode with the MOSFET (called JBSFET) solves these issues [3] , [4] for 1.2 kV devices. This paper reports experimental data on 2.3 kV JBSFETs with different cell topologies (Linear, Hexagonal and Octagonal) for the first time at this larger voltage capability .