A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOS

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972740

Y. Greshishchev, Tingjun Wen, Naim Ben-Hamida, J. Aguirre, S. Aouini, M. Besson, R. Gibbins, Y. Cho, Jerry Lam, D. McPherson, M. Parvizi

引用次数: 6

Abstract

CMOS FinFET is a leading technology choice for state-of-the-art DSP ASICs, where achieving a high signal to noise and distortion ratio (SINAD) in the transmitter DAC becomes one of the analog design challenges. This paper presents a 60 GS/s 8-b DAC in 7nm FinFET CMOS with SINAD close to 30 dB up to the Nyquist frequency.

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60gs /s 8-b DAC， > 29.5dB SINAD，最高奈奎斯特频率，用于7nm FinFET CMOS

CMOS FinFET是最先进的DSP asic的领先技术选择，在发射机DAC中实现高信噪比和失真比(SINAD)成为模拟设计挑战之一。本文提出了一种60gs /s的8b DAC，采用7nm FinFET CMOS, SINAD接近30db，达到奈奎斯特频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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