FinFET based adiabatic logic design for low power applications

L. Dileshwar Rao, Soumya Dixit, K. Pachkor, M. Aarthy
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引用次数: 8

Abstract

The circuit behaviour in Adiabatic logic and FinFET Technology is studied in detail in the literature so as to improve the ultralow power design. The energy saved by adiabatic logic using FinFET is significant compared to the CMOS. This way of designing a circuit is effective in low speed operations where power consumption is more important than performance. Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. Finfet, a long channel device which improves electrostatic control over device. These low power requirements have emerged due to the advancement in technology where power is more important like medical, mobile phones, hand held devices etc. In subthreshold logic, the circuit operates with supply voltage less than that of the threshold voltage of the transistor and utilizes leakage current as the operating current. This is achieved as the dynamic power consumption is quadratic ally dependent on the supply voltage. To show the results we are implementing 4-bit adder in subthreshold adiabatic logic using FinFET technology which shows that the power consumed by FinFET adiabatic logic will be less than that of normal adiabatic operation operation. The analysis has been carried for 32nm FinFET models using HSPICE simulations. For performance analysis we also used industry standard Cadence® EDA tools.
基于FinFET的低功耗绝热逻辑设计
本文对绝热逻辑和FinFET技术中的电路特性进行了详细的研究,以改进其超低功耗设计。与CMOS相比,使用FinFET的绝热逻辑节省的能量是显著的。这种设计电路的方法在功耗比性能更重要的低速操作中是有效的。翅片型场效应晶体管(finfet)是纳米级体CMOS的有前途的替代品。Finfet,一种长通道器件,可提高器件的静电控制。由于技术的进步,这些低功耗要求已经出现,其中电源更重要,如医疗,移动电话,手持设备等。在亚阈值逻辑中,电路在电源电压小于晶体管的阈值电压的情况下工作,并利用泄漏电流作为工作电流。这是实现的动态功耗是二次盟友依赖于电源电压。为了显示结果,我们使用FinFET技术在亚阈值绝热逻辑中实现了4位加法器,这表明FinFET绝热逻辑所消耗的功率将小于正常绝热操作的功率。利用HSPICE模拟对32nm FinFET模型进行了分析。对于性能分析,我们还使用了行业标准的Cadence®EDA工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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