V-band flip-chip pHEMT balanced power amplifier with CPWGMS-CPWG topology and CPWG Lange couplers

Wei-Ling Chang, Jen-Yi Su, C. Meng, Chia-Hung Chang, G. Huang
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引用次数: 1

Abstract

A V-band balanced two-stage power amplifier MMICs with Lange couplers is demonstrated using 0.15 µm GaAs pHEMT technology in this paper. A CPWG-MS-CPWG topology with via holes at the transistors as the transition between coplanar waveguide with backside ground (CPWG) and microstrip (MS) is employed for the two-stage amplifier. CPWG is applied to realize the flip-chip transition interface for both input and output ports of the amplifier and interstage MS matching has the advantage of small size. The structure parameters of the CPWG Lange coupler and matching network are designed and optimized for power combining. Finally, a 60-GHz balanced two-stage power amplifier using a CPWG-MS-CPWG structure delivers the small signal gain of 18 dB, OP1dB of 12 dBm and Psat of 15 dBm.
采用CPWGMS-CPWG拓扑结构和CPWG Lange耦合器的v波段倒装pHEMT平衡功率放大器
本文介绍了一种采用0.15µm GaAs pHEMT技术的带Lange耦合器的v波段平衡两级功率放大器mmic。该两级放大器采用CPWG-MS-CPWG拓扑结构,在晶体管上通过通孔作为带背地的共面波导(CPWG)和微带(MS)之间的过渡。采用CPWG实现放大器输入输出端倒装转换接口,级间MS匹配具有体积小的优点。对CPWG Lange耦合器的结构参数和匹配网络进行了优化设计。最后,采用CPWG-MS-CPWG结构的60 ghz平衡两级功率放大器提供了18 dB的小信号增益,12 dBm的OP1dB和15 dBm的Psat。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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