Munaf T. A. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder
{"title":"Switching-self-clamping-mode \"SSCM\", a breakthrough in SOA performance for high voltage IGBTs and diodes","authors":"Munaf T. A. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder","doi":"10.1109/ISPSD.2004.1332970","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new high voltage IGBT and diode design platform exhibiting the highest SOA limits achieved to date. We demonstrate for the first time, low loss IGBT and diode chip-sets with voltage ratings ranging from 3.3 kV to 6.5 kV, capable of withstanding both dynamic avalanche and what we refer to as the switching-self-clamping-mode; hence, resulting in a clear breakthrough in SOA capability for high voltage devices.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"67","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2004.1332970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 67
Abstract
In this paper, we present a new high voltage IGBT and diode design platform exhibiting the highest SOA limits achieved to date. We demonstrate for the first time, low loss IGBT and diode chip-sets with voltage ratings ranging from 3.3 kV to 6.5 kV, capable of withstanding both dynamic avalanche and what we refer to as the switching-self-clamping-mode; hence, resulting in a clear breakthrough in SOA capability for high voltage devices.