Gemma Navarro, C. Sabbione, V. Meli, L. Nistor, M. Frei, J. Garrione, M. Tessaire, F. Fillot, N. Bernier, E. Nolot, B. Sklénard, J. Li, S. Martin, N. Castellani, G. Bourgeois, M. Cyrille, F. Andrieu
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Abstract
In this work we investigate the benefits of amorphous Multilayer (ML) deposition in Phase-Change Memory (PCM). Different ML stacks based on Ge1 Sb2 Te4 composition are developed and characterized by physico-chemical analyses, providing a spectacular demonstration of highly-textured crystalline layer after high thermal budget and of higher layer uniformity. ML PCM device performances are evaluated at statistical level in 16 kb arrays, showing a lower electrical parameters variability, best endurance results and lowest Bit Error Rate wrt equivalent bulk layer.
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