SiGe HV/CVD epitaxy growth on patterned Si substrate

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981550

L. Zhi-nong, Chen Pei-yi, Yan Yun-jie, Tsien Pei-hsin

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Abstract

This letter investigates the SiGe epitaxy growth on patterned Si substrate (patterned SiO/sub 2/ on Si substrate), and shows that the crystal quality of the SiGe/Si interface is excellent and that the SiGe epitaxial thin film on Si substrate in the patterned window is a single crystal.

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SiGe HV/CVD在图案化Si衬底上的外延生长

本文研究了SiGe在图图化Si衬底上的外延生长(patterned SiO/sub 2/ on Si衬底)，表明SiGe/Si界面的晶体质量很好，图图化窗口内Si衬底上的SiGe外延薄膜为单晶。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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