Experimental evidences and simulations of trap generation along a percolation path

Abstract

In this paper we present experimental results of single trap impact on bulk MOSFETs, shedding light on counter intuitive behavior when increasing the gate bias. Using a well calibrated 3D TCAD model, statistical simulations at atomistic level are performed, demonstrating that the interactions between the traps and the percolation path are responsible for the unexpected bias dependences of the trap impact and therefore that a trap generation enhanced by higher current densities along this path can explain measured data.