Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs

Abstract

An anomalous p/sup +/ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p/sup +/ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability.<>