{"title":"39GHz GaN front end MMIC for 5G applications","authors":"Bumjin Kim, Vivian Zhi-Qi Li","doi":"10.1109/CSICS.2017.8240473","DOIUrl":null,"url":null,"abstract":"This paper presents the design and the measured results of a GaN-based T/R MMIC suitable for millimeter-wave 5G applications. The design successfully integrated a PA, an LNA, and a T/R switch in one IC. At 39GHz, the transmit path achieved an average output power of 26dBm with 9% PAE and −30dBc ACPR under a 64QAM OFDM signal. The receive path achieved 16dB gain with 4dB NF. The fabricated MMIC is packaged in a low cost surface mount package in both single and dual channel versions to support multi-element phased array applications.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This paper presents the design and the measured results of a GaN-based T/R MMIC suitable for millimeter-wave 5G applications. The design successfully integrated a PA, an LNA, and a T/R switch in one IC. At 39GHz, the transmit path achieved an average output power of 26dBm with 9% PAE and −30dBc ACPR under a 64QAM OFDM signal. The receive path achieved 16dB gain with 4dB NF. The fabricated MMIC is packaged in a low cost surface mount package in both single and dual channel versions to support multi-element phased array applications.