39GHz GaN front end MMIC for 5G applications

Bumjin Kim, Vivian Zhi-Qi Li
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引用次数: 14

Abstract

This paper presents the design and the measured results of a GaN-based T/R MMIC suitable for millimeter-wave 5G applications. The design successfully integrated a PA, an LNA, and a T/R switch in one IC. At 39GHz, the transmit path achieved an average output power of 26dBm with 9% PAE and −30dBc ACPR under a 64QAM OFDM signal. The receive path achieved 16dB gain with 4dB NF. The fabricated MMIC is packaged in a low cost surface mount package in both single and dual channel versions to support multi-element phased array applications.
用于5G应用的39GHz GaN前端MMIC
本文介绍了一种适用于毫米波5G应用的基于gan的T/R MMIC的设计和测量结果。该设计成功地将PA、LNA和收发开关集成在一个IC中。在39GHz的发射路径下,在64QAM OFDM信号下,平均输出功率为26dBm, PAE为9%,ACPR为- 30dBc。接收路径增益为16dB, NF为4dB。制造的MMIC封装在低成本的表面贴装封装中,有单通道和双通道版本,以支持多元素相控阵应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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