A low temperature 0.35μm CMOS technology BSIM3.3 model for space instrumentation: Application to a voltage reference design

Abstract

Space missions require electronics providing high performances under extreme conditions. The most restrictive ones are cryogenics temperatures and radiations. Application Specific Integrated Circuit (ASIC) aims at reaching high performances, low weight and low power consumption. Therefore, simulation models available from industrial foundries are meant to work only from 230K to 430K. In this work, we present a cryogenic electrical model for a 0.35μm/3.3V CMOS technology, based on extracted transistor BSIM3.3 parameters model from room temperature down to Liquid Nitrogen Temperature (LNT). These models are used to design and test a full CMOS reference voltage circuit with only 20ppm/K drift for space instrumentation.