On-wafer scattering parameter characterization of differential four-port networks LNA using two-port vector network analyzer

M. Muhamad, N. Soin, H. Ramiah, N. Noh, C. W. Keat
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引用次数: 1

Abstract

This paper presents a technique that enables very accurate measurement for S-parameter of differential low noise amplifier by means of a standard two-port vector network analyzer (VNA). This technique involves by terminating two ports at one time while another two ports are measured. Accurate characterization of a two port device requires a four-port vector network analyzer, which might be not easily available. Thus, it is a common practice to terminate the two of the four ports to be used which the conventional/standard two port VNA. Even though the above approach is applicable but the reliability and conformity of the test method is still limited and uncertain. For verification, the measurement using four-port VNA have been conducted to test the devices S-parameters are accurately similar with the two port network. The fabricated on-wafer differential LNA structure was tested and measured with normal two-port VNA and also four-port VNA. By using this technique, there is no need to purchase a four-port VNA. By using this technique, any multi-port circuit network can be measured. The LNA has been implemented in RF 0.13um CMOS process. The differential LNA shows the measured performance in term of gain is equal to 17.4 dB. This give the percentage difference of 0.63 compared with measured using four-port VNA. The circuit consume only 9 mW power while dissipating 7.59mA from a 1.8 V supply. Generally, the measured results of the on-wafer fabricated differential LNA show good agreement for both set up.
基于双端口矢量网络分析仪的差分四端口网络LNA的片上散射参数表征
本文提出了一种利用标准双端口矢量网络分析仪(VNA)对差分低噪声放大器s参数进行精确测量的方法。该技术涉及在测量另外两个端口时同时终止两个端口。准确表征一个双端口设备需要一个四端口矢量网络分析仪,这可能不容易获得。因此,通常的做法是终止传统/标准双端口VNA所使用的四个端口中的两个。尽管上述方法是适用的,但测试方法的可靠性和符合性仍然是有限的和不确定的。为了验证,使用四端口VNA进行了测量,以测试设备的s参数与两端口网络精确相似。采用普通双端口VNA和四端口VNA对制备的片上差分LNA结构进行了测试和测量。通过使用这种技术,不需要购买四端口VNA。利用该技术,可以对任意多端口电路网络进行测量。LNA已在RF 0.13um CMOS工艺中实现。差分LNA显示增益方面的测量性能等于17.4 dB。与使用四端口VNA测量相比,这给出了0.63的百分比差异。该电路仅消耗9mw功率,而从1.8 V电源耗散7.59mA。一般来说,片上制造的差分LNA的测量结果与两种设置的结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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