Optical and electrical noise and quality of degraded strained-layer DFB laser

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237208

J. Simmons, R. Sobiestianskas, S. Pralgauskaitė, J. Matukas, V. Palenskis

{"title":"Optical and electrical noise and quality of degraded strained-layer DFB laser","authors":"J. Simmons, R. Sobiestianskas, S. Pralgauskaitė, J. Matukas, V. Palenskis","doi":"10.1109/COMMAD.2002.1237208","DOIUrl":null,"url":null,"abstract":"High-frequency relative intensity noise, mode-suppression ratio and cross-spectra of low-frequency optical and electrical noise were measured in 1.55 /spl mu/m strained-layer multi-quantum-well (MQW) InGaAsP/InP laser diodes, which underwent accelerated aging. The deterioration of the linewidth and side-mode-suppression ratio is accompanied by an increase in the negative correlation between the optical noise and terminal electrical noise in the vicinity of the threshold. This is explained by recombination processes through point defects in some areas of the active layer, which contributes to an intensive Lorentzian noise. An absence of both the Lorentzian noise and negative correlation between optical and electrical fluctuations at threshold indicate higher quality laser operation. It is, therefore, concluded that measurements of the correlation factor could be used as convenient method in laser quality screening.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

High-frequency relative intensity noise, mode-suppression ratio and cross-spectra of low-frequency optical and electrical noise were measured in 1.55 /spl mu/m strained-layer multi-quantum-well (MQW) InGaAsP/InP laser diodes, which underwent accelerated aging. The deterioration of the linewidth and side-mode-suppression ratio is accompanied by an increase in the negative correlation between the optical noise and terminal electrical noise in the vicinity of the threshold. This is explained by recombination processes through point defects in some areas of the active layer, which contributes to an intensive Lorentzian noise. An absence of both the Lorentzian noise and negative correlation between optical and electrical fluctuations at threshold indicate higher quality laser operation. It is, therefore, concluded that measurements of the correlation factor could be used as convenient method in laser quality screening.

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退化应变层DFB激光器的光电噪声与质量

在1.55 /spl mu/m应变层多量子阱(MQW) InGaAsP/InP激光二极管中，测量了加速老化后的高频相对强度噪声、模抑制比和低频光电噪声的交叉光谱。线宽和侧模抑制比的恶化伴随着阈值附近光噪声与终端电噪声负相关关系的增加。这可以通过在有源层的某些区域通过点缺陷的重组过程来解释，这有助于产生强烈的洛伦兹噪声。没有洛伦兹噪声和阈值处光和电波动之间的负相关关系表明更高质量的激光操作。因此，相关因子的测量可作为激光质量筛选的一种简便方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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