Understanding the Switching Mechanism in Transition Metal Oxide Based ReRAM Devices

Abstract

This paper presents the switching characteristics of ReRAM devices fabricated using Ru as bottom electrode, HfO2 as the switching Transition Metal Oxide, and TiN as the top electrode. The devices demonstrated excellent endurance up to 106 cycles and retention up to 105 seconds. The Capacitance-Voltage characteristics were studied in conjunction with the Current-Voltage characteristics to understand the role of the compliance current in governing the filament dimensions and mechanism of switching.