Recent advances on a wafer-level flip chip packaging process

Q. Tong, B. Ma, E. Zhan, A. Savoca, L. Nguyen, C. Quentin, S. Luo, H. Li, L. Fan, C. Wong
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引用次数: 26

Abstract

In the last few years, flip chip technology has been increasingly employed in a variety of applications in the microelectronics industry. Comparing to conventional wirebonding technology, flip chip provides lower profile, faster signal transfer, and higher I/O density. One of the key materials used in flip chip is the underfill encapsulant, which enhances the reliability of the flip chip device by more than an order of magnitude. Currently, underfilling is carried out at the package level, e.g., each chip has to be processed individually after solder reflow. The encapsulant has to be post-cured subsequently off-line. The slow underfilling process becomes a bottleneck in the high volume manufacturing of flip chip. A joint venture program, sponsored by the Advanced Technology Program (ATP), was formed to explore the next paradigm shift in flip chip packaging technology, namely, processing underfill at the wafer level. In this process, the underfill is deposited on the wafer prior to dicing. At the assembly stage, the singulated die is processed as in standard flip chip reflow operations. The main difference is that the pre-coated underfill with built-in flux will cure concurrently with the reflow of the solder, allowing both electrical and structural interconnection to be achieved simultaneously. Therefore, this wafer level underfill process offers much potential in terms of reduced production time and increased throughput. The process will be directly suitable for high volume production using the existing assembly infrastructure, lowering the cost of implementation. In this paper, the technical challenges and the solutions for both materials development and process verification in this program will be discussed.
晶圆级倒装晶片封装工艺的最新进展
在过去的几年里,倒装芯片技术已经越来越多地应用于微电子工业的各种应用中。与传统的线键技术相比,倒装芯片具有更低的外形、更快的信号传输和更高的I/O密度。下填料是倒装芯片中使用的关键材料之一,它可以将倒装芯片器件的可靠性提高一个数量级以上。目前,欠填充是在封装级别进行的,例如,每个芯片必须在焊料回流后单独处理。密封剂必须在脱机后进行后固化。缓慢的下填充过程成为倒装芯片大批量生产的瓶颈。一个由先进技术计划(ATP)赞助的合资项目成立,旨在探索倒装芯片封装技术的下一个范式转变,即在晶圆级处理下填充。在此过程中,下填料在切丁之前沉积在晶圆片上。在组装阶段,按照标准的倒装芯片回流操作来处理单个模具。主要区别在于,内置助焊剂的预涂底填料将与焊料回流同时固化,从而同时实现电气和结构互连。因此,这种晶圆级底填工艺在减少生产时间和提高产量方面提供了很大的潜力。该工艺将直接适用于使用现有组装基础设施的大批量生产,从而降低了实施成本。本文将讨论该项目中材料开发和工艺验证的技术挑战和解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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