{"title":"The Bulk Built In Current Sensor Approach for Single Event Transient Detection","authors":"G. Wirth, C. Fayomi","doi":"10.1109/ISSOC.2007.4427422","DOIUrl":null,"url":null,"abstract":"Radiation effects, particularly single event transients (SETs), are increasingly affecting the reliability of integrated circuits as device dimensions are scaling down. This paper presents the use of bulk built in current sensors (Bulk-BICS) for SET detection. The efficiency and applicability of the bulk-BICS approach for Single Event Transient detection is demonstrated through device and circuit level simulations.","PeriodicalId":244119,"journal":{"name":"2007 International Symposium on System-on-Chip","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on System-on-Chip","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSOC.2007.4427422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
Radiation effects, particularly single event transients (SETs), are increasingly affecting the reliability of integrated circuits as device dimensions are scaling down. This paper presents the use of bulk built in current sensors (Bulk-BICS) for SET detection. The efficiency and applicability of the bulk-BICS approach for Single Event Transient detection is demonstrated through device and circuit level simulations.