Design of a Stacked C-DAC Output Stage with Feed-Forward Assisted Cascode Charging in 16 nm FinFET Technology

Alessandra Cangianiello, Michael Kalcher, Daniel Gruber, M. Clara
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Abstract

This paper presents the design and analysis of a stacked C-DAC output stage with feed-forward assisted cascode charging in 16 nm FinFET technology. The presented design operates with input signals in a frequency range from a few hundred MHz up to 6 GHz. Simulation results of the proposed design show that output power can be more than doubled compared to a reference design without stacked inverter while maintaining a SFDR over frequency of better than 65 dBc and two-tone intermodulation distortion of better than −68 dBc.The main linearity limit of the stacked inverter design is overcome by addition of a capacitive feed-forward branch.
16纳米FinFET技术中前馈辅助级联充电的堆叠C-DAC输出级设计
本文介绍了一种采用16纳米FinFET技术的前馈辅助级联充电的堆叠C-DAC输出级的设计和分析。本设计的输入信号频率范围从几百兆赫到6千兆赫。仿真结果表明,与没有堆叠逆变器的参考设计相比,该设计的输出功率可以提高一倍以上,同时保持优于65 dBc的频率上SFDR和优于- 68 dBc的双音互调失真。通过增加电容前馈支路克服了堆叠式逆变器设计的主要线性限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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