Substrate doping induced hole barrier lowering in PtSi/n-Si Schottky diode and its implication to PtSi source/drain SBFETs

Hongyu Yu
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Abstract

In this paper, Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes is demonstrated empirically and we study its implications to Schottky-barrier (SB) source/drain p-FETs. We show that the hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which can lead to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p- SOI SBFETs performance.
衬底掺杂诱导PtSi/n-Si肖特基二极管空穴势垒降低及其对PtSi源极/漏极sbfet的影响
本文实证地证明了硅化铂/n-Si二极管的肖特基势垒高度(SBH)降低,并研究了其对肖特基势垒(SB)源极/漏极p场效应管的影响。我们表明,通过增加n-Si衬底掺杂,可以通过像力机制降低空穴SBH,这可以导致长沟道体p- sbet中的驱动电流大幅增加。数值模拟表明,沟道掺杂浓度对短沟道n-和p- SOI sbfet的性能也至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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