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Study on off-state hot carrier degradation and recovery of NMOSFET in SWD circuits of DRAM

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI:10.1109/IIRW.2016.7904910
Kangil Kim, I. Chung, Duan Sun, Sangjae Rhe, Ilgweon Kim, Hongsun Hwang, Kangyong Cho, Gyoyoung Jin
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引用次数: 7

Abstract

We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage degradation occurred by the off-state hot carrier stress. The gate of NMOS transistor in sub wordline driver (SWD) in the off-state is under the subthreshold region (0
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DRAM SWD电路中NMOSFET的非状态热载流子退化与恢复研究
我们研究了短通道NMOS晶体管在亚字线驱动器(SWD)中阈值电压的退化和恢复，其中NMOS晶体管的源在关闭状态时偏置负电压。我们发现阈值电压退化是由非状态热载流子应力引起的。由于源端负偏置电压的作用，处于关断状态下的子字线驱动器(SWD)中NMOS晶体管的栅极处于亚阈值区域(0
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2016 IEEE International Integrated Reliability Workshop (IIRW)
2016 IEEE International Integrated Reliability Workshop (IIRW)
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