An investigation of the SONOS with side-block oxide for non-volatile memory

Abstract

In this paper, a novel device structure called the SONOS non-volatile memory with side-block oxide (SBOSO-NOS-NVM) has been demonstrated. The SBOSO-NOS-NVM enhances the program/erase (P/E) speed and memory window by using Fowler-Nordheim (FN) injection mechanism, when compared with SONOS non-volatile memory without side-block oxide (SONOS-NVM). The SBOSONOS-NVM still has excellent characteristics with gate length downs to 40 nm. The side-block oxide structure can suppress the Source/Drain electric field encroachment, so its gate controllability over the channel charges can be improved. Also, the SBOSONOS-NVM is also fully compatible with standard CMOS process technology.