Electrical and structural properties of Al-doped ZnO films

Abstract

Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.