{"title":"Power trends and performance characterization of 3-dimensional integration for future technology generations","authors":"R. Zhang, K. Roy, Cheng-Kok Koh, D. Janes","doi":"10.1109/ISQED.2001.915230","DOIUrl":null,"url":null,"abstract":"3-D technology promises higher integration density and lower interconnection complexity and delay. At present, however, not much work on circuit applications has been done due to lack of insight into 3-D circuit architecture and performance. One of the purposes of realizing 3-D integration is to reduce the interconnect complexity and delay of 2-D, which are widely avowed as the barriers to the continued performance gain in the future technology generations. Therefore, in this paper, we present a stochastic 3-D interconnect model, study the impact of 3-D integration on circuit performance and power consumption. We show that 3-D structures effectively reduce the number of long delay nets, significantly reduce the number of repeaters, and dramatically improve the circuit performance. With 3-D integration, circuits can be clocked at frequencies much higher (double, even triple) than with 2-D. However, we also show that the impacts of vertical wires on chip area and interconnect delay can be limiting factors on the vertical integration of device layers; and that 3-D integration offers limited relief of power consumption.","PeriodicalId":110117,"journal":{"name":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2001.915230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
3-D technology promises higher integration density and lower interconnection complexity and delay. At present, however, not much work on circuit applications has been done due to lack of insight into 3-D circuit architecture and performance. One of the purposes of realizing 3-D integration is to reduce the interconnect complexity and delay of 2-D, which are widely avowed as the barriers to the continued performance gain in the future technology generations. Therefore, in this paper, we present a stochastic 3-D interconnect model, study the impact of 3-D integration on circuit performance and power consumption. We show that 3-D structures effectively reduce the number of long delay nets, significantly reduce the number of repeaters, and dramatically improve the circuit performance. With 3-D integration, circuits can be clocked at frequencies much higher (double, even triple) than with 2-D. However, we also show that the impacts of vertical wires on chip area and interconnect delay can be limiting factors on the vertical integration of device layers; and that 3-D integration offers limited relief of power consumption.