A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C 4th-order curvature-compensated CMOS bandgap reference

K. Leung, P. Mok, Chi Yat Leung
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引用次数: 16

Abstract

A 4th-order curvature-compensated CMOS bandgap reference, which uses a high-resistive poly resistor to a generate temperature dependent resistor ratio, is proposed. The proposed reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C and a line regulation of /spl plusmn/1.25 mV/V are achieved at 2-V supply. The improvement on temperature coefficient is about 5 times reduction compared to the conventional approach.
一个2 v 23 /spl mu/A 5.3 ppm//spl度/C四阶曲率补偿CMOS带隙基准
提出了一种四阶曲率补偿的CMOS带隙基准,该基准采用高阻多晶硅电阻产生温度相关电阻比。所提出的基准可以低至2v电源,并消耗23 /spl mu/ a的最大电源电流。温度系数为5.3 ppm//spl度/C,线路调节为/spl plusmn/1.25 mV/V。改进后的温度系数比传统方法降低了约5倍。
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