Nickel silicide formation on Si(110) substrate

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI:10.1109/IWJT.2010.5474895

Xiao Guo, Xiao-Rong Wang, Yu-Long Jiang, G. Ru, Bingzong Li

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Abstract

Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.

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在Si(110)衬底上形成硅化镍

本文研究了硅(110)衬底上硅化镍的形成。与在Si(100)衬底上制备的样品相比，发现在Si(110)衬底上形成NiSi需要更高的退火温度。采用x射线衍射和原子力显微镜对材料进行进一步分析。NiSi/Si(110)肖特基触点也用于电特性评估。本文还讨论了镍在Si(110)基体上硅化的形成动力学。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 International Workshop on Junction Technology Extended Abstracts

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