GaAs Solar Cell: Effect of P-Layer Thickness on Device Parameter

Abstract

p-layer thickness dependence ideality factor, series resistance and barrier height had been investigated of a p-n junction GaAs diode. Solar cell response under sun light illumination was taken and it was found that efficiency, fill factor and short circuit current increased with the thickness of p-GaAs but after a certain thickness all this parameters decreased with increase in thickness. The efficiency of the cell was reached maximum 12.7% at air mass 1 for a 3 μm p layer thickness.