A cross-point MNOS capacitor memory

Abstract

High density in non-volatile MNOS thin oxide memory has been achieved by constructing a crosspoint capacitive cell memory. Since the memory cell is formed at the cross-point of a metal bus and silicon bus, it is perhaps the simplest structure in MNOS memories and gives a theoretical limit on the memory density. An 8×8 matrix of the cross-point memory has been fabricated. Writing and erasing are accomplished with half-select. Reading is accomplished by sensing whether the reading signal is coupled through the memory capacitor or not.