M. F. Beug, T. Melde, J. Paul, U. Bewersdorff-Sarlette, M. Czernohorsky, V. Beyer, R. Hoffmann, K. Seidel, D. Lohr, L. Bach, R. Knoefler, A. Tilke
{"title":"Improvement of 48 nm TANOS NAND Cell Performance by Introduction of a Removable Encapsulation Liner","authors":"M. F. Beug, T. Melde, J. Paul, U. Bewersdorff-Sarlette, M. Czernohorsky, V. Beyer, R. Hoffmann, K. Seidel, D. Lohr, L. Bach, R. Knoefler, A. Tilke","doi":"10.1109/IMW.2009.5090595","DOIUrl":null,"url":null,"abstract":"This paper presents charge trapping (CT) cells integrated with a sacrificial liner at the word line (WL) side wall which improves significantly the erase and retention characteristics, currently the main issues in CT memory devices.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090595","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents charge trapping (CT) cells integrated with a sacrificial liner at the word line (WL) side wall which improves significantly the erase and retention characteristics, currently the main issues in CT memory devices.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
